The Simulation Analysis of Cross-Talk Behavior in SOI Mixed-Mode Integrated Circuits

作     者：Zhang Guoyan Liao Huailin Huang Ru ZhangXing Wang Yangyuan (Institute of Microelectronics Peking University Beijing P.R.China 100871) 

会议名称：《2001 6～(th) International Conference on Solid-State and Integrated Circuit Technology》

会议日期：2001年

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 

关 键 词：cross-talk SOI mixed-mode IC’s 

摘      要：正with two-dimensional（2D）TMA medicisimulator,the systematic analysis of cross-talk behavioris presented for different SOI mixed-mode integratedcircuits such as PD（partially-depleted）、FD（fully-depleted）and BC（body-contacted）*** is foundthat the substrate-grounded SOI structure can lower thenoise coupling to a large extent compared to thesubstrate-floating ***,the efficiency of differentstrategies for reducing cross-talk such as trenchisolation、capacitive guard ring and distance separating isalso *** results are very important forevaluating cross-talk effects in low-noise coupling SOImixed-mode IC’s.