Fabrication and Properties of Nano-Si Quantum Dot Flash Memory
作者单位：Sharp Labs.of AmericaInc.5700 NW Pacific Rim BlvdCamasWA 98607USA
会议名称：《2006 8th International Conference on Solid-State and Integrated Circuit Technology》
会议日期：2006年
学科分类：08[工学] 081201[工学-计算机系统结构] 0812[工学-计算机科学与技术（可授工学、理学学位）]
关 键 词：Fabrication Quantum dots Flash memory
摘 要：We proposed a novel integration processes including multi-layer CVD poly-Si deposition and post-annealing and thermal oxidation processes for nano-Si quantum dot flash memory devices *** these processes,high quality nano-Si quantum dot flash memory devices have been *** increasing tunneling oxide thickness,the operation voltage increases,but retention properties are *** increasing nano-Si particle sizes and layer thickness,the memory window increases from 6V to *** programming to on or off states,the drain current read at 1V is about 5×10 A and 5×10A respectively. The ratio of on current to off current is about 8 *** nano-Si quantum dot memory devices show very good properties.