Investigation of hole injection characteristics in NPB/Alq3 heterojunction devices

作     者：Denghui Xu a,Xiong Li a,Zhaoyue Lv b,Ye Zou b,Zhenbo Deng b a School of Mechanical Engineering,Beijing Technology and Business University,Beijing 100037,P.R.China b Key Laboratory of Luminescence and Optical Information,Ministry of Education,Institute of Optoelectronic Technology,Beijing Jiaotong University,Beijing 100044,P.R.China 

会议名称：《2010亚洲光电子会议LED和显示技术分会场》

会议日期：2010年

学科分类：08[工学] 0803[工学-光学工程] 

基　　金：supported by the National Natural Science Foundation of China under Contract no.61007021 Scientific Research Common Program of Beijing Municipal Commission of Education (Grant No.KM201010011009 and No.KM200910011010) the Funding Project for Academic Human Resources Development in Institutions of Higher Learning Under the Jurisdiction of Beijing Municipality (Grant No.PHR201007122) 

关 键 词：Ohmic contact Organic light-emitting diodes(OLEDs) hole 

摘      要：The effect of ozone and O 2 plasma treatment of ITO on the charge-carrier injection in ITO/N,N’-bis-（1-napthyl）-N,N’diphenyl-1,1’biphenyl-4,4’-diamine（NPB）/tris（8-quinolinolato）-aluminum（Alq 3）/Al organic heterojunction devices have been studied through the analysis of current-voltage *** the experiments,it is demonstrated that the average electric field inside Alq 3 layer is larger than the average field in the NPB *** investigation demonstrated that the hole injection into NPB from anode is Fowler-Nordheim（FN） tunneling and the electron injection into Alq 3 from cathode is Richardson-Schottky（RS） thermonic emission.