In situ high pressure Raman and fluorescence investigation on onolayer WS2
作者单位：College of Physics State Key laboratory of Superhard Materials Jilin University P.R.China
会议名称：《第十八届全国光散射学术会议》
会议日期：2015年
学科分类：081702[工学-化学工艺] 08[工学] 0817[工学-化学工程与技术]
摘 要：正It is beyond the question that transition metal dichalcogenides（TMD）such as tungsten disulfide are in possession of several qualities in photonic,mechanical and particularly electronic *** from its bulk counterparts that are in-direct semiconductor,the monolayer of WS2 has a direct band gap