Nanoscale electrical properties of individual GeSi quantum dots and quantum rings studied by scanning probe microscopy
会议名称：《第18届国际真空大会》
会议日期：2010年
学科分类：080903[工学-微电子学与固体电子学] 07[理学] 0809[工学-电子科学与技术（可授工学、理学学位）] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学]
关 键 词：GeSi quantum dots/quantum rings CAFM/SKM/SCM electrical property
摘 要：The electrical properties of self-assembled GeSi quantum dots (QDs) and quantum rings (QRs) have attracted intense interests for their promising applications. Scanning probe microscopy offers an effective way to study the electrical properties of individual GeSi QDs and QRs. However many effects will influence the measured results, such as morphology, composition distribution, dot/ring size. To dis-tinguish these effects, Si QDs and QRs with different sizes were fabricated by using nano-sphere tech-niques. The electrical properties of Si QDs and QRs were investigated by CAFM, SKM and SCM, and the effects of morphology and size are studied. By comparing the electrical properties of Si QDs/QRs with GeSi’s counterparts, the compositional effect on the electrical properties is discussed. Together with the compositional information of GeSi QDs/QRs obtained by atomic force microscopy with selective chemical etching, the possible mechanisms for nano-scale electrical properties of GeSi QDs and QRs are suggested.