Research on the Performance of Different Nd-Doped GdVO4 Lasers

作     者：Xu H. Zh., Qin L.J., Gao Y., Meng X.L., Jia Y.G. and Wang B.College of Envir. and Mater. Engineering, Yantai Univer., Yantai, 264005 National Lab. of Cryst.l Mater., Shandong Unive., Jinan 250100 

会议名称：《RadTech Asia 2005》

会议日期：2005年

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学] 

摘      要：正 With GdVO4 crystals samples doped Nd ion concentrations of 0.52, 0.78, 1.14, 1.61 at.%, laser were performed under high pumping power of laser diode at 1.06,1.34 urn and 532, 671 nm. The crystal growth and the influence on the laser output properties of different Nd-doped concentrations in Nd:GdVO4 crystals had been discussed. Our experimental results show that the optimum Nd-doped concentration in Nd:GdVO4 crystal is no more than 1 at.% under a pumping power of 30 W.