Optimal Ramped-Gate Soft Programming of Over-Erased Flash EEPROM Cells at Given Current
作者单位：School of Electrical Engineering and Computer Scienceand ISRCSeoul National UniversityKwanak P.O.Box 34Seoul 151-744Korea Korea Institute for Advanced Study207-43 CheongryangriSeoulKorea
会议名称：《2004 7th International Conference on Solid-State and Integrated Circuits Technology（ICSICT 2004）》
会议日期：2004年
学科分类：08[工学] 081201[工学-计算机系统结构] 0812[工学-计算机科学与技术（可授工学、理学学位）]
摘 要：正Presented herein is an efficient simulation technique enabling systematic investigation of the soft programming over-erased flash EEPROM *** simulation provides a method by which to find the optimal soft programming technique for given current. The method requires only the cell performance data and allows investigation of the soft programming under various bias *** principle,the methodology can also be used to investigate the programming and erase operations.