Nitrogen Doping Effect in a-Ge:H Films Due To High Hydrogen Dilution
作者单位：Dept.of Electrical Engineering Hiroshima UniversityHigashi-Hiroshima 739Japan
会议名称：《1996年中国青年学者物理学讨论会》
会议日期：1997年
学科分类：08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）]
关 键 词：amorphous germanium nitrogen doping effect
摘 要：A series of a-Ge:N:H films have been produced by employing d glow discharge decomposition of hydrogen-dilutd gas mixutres of NH and *** was found that hydrogen dilution induces the decrease of the nitrogen content in the films and the corresponding optical band gap is also rapidly *** dramatic increase of eonduetivity was explained in terms of the nitrogen doping effect.