Recent Progress of Low Temperature Poly-Si TFT Technology
作者单位：R＆D Group TPO Display Corp.No.12 K Jung Rd.Science-Based Industrial ParkChu-Nan 350Miao-Li CountyTaiwanChina R＆D Group TPO Display Corp.No.12 K Jung Rd.Science-Based Industrial ParkChu-Nan 350Miao-Li CountyTaiwanChina
会议名称：《2007亚洲显示国际会议》
会议日期：2007年
学科分类：080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学]
关 键 词：LTPS SOP Crystallization
摘 要：正In this paper,we briefly review the recent progress of key LTPS technologies including laser crystallization,ion do- ping,and formation of gate *** resulting from new lateral growth methods is discussed in detail;the performance of TFTs is strongly influenced by the quality of poly-Si film （ e.g.,grain size,intra-grain defects,and sur- face morphology）.We focus on potential issues of recent lateral growth technology for mass production including aniso- tropic crystallinity related to laser scanning direction and poor uniformity of intra-grain defect ***,we propose a novel lateral crystal growth technology in which green laser is irradiated to a-Si film with underlying reflective metals as a *** method can achieve large and uniform grain structure without anisotropic crystallinity and poor uniform in- tra-grain defect density.