Development of Angle Resolved HXPS Instrument for Laboratory Use
作者单位：Materials Analysis StationNational Institute for Materials ScienceTsukuba 305-0047Japan NIMS Beamline Station at Spring-8National Institute for Materials ScienceSayo 679-5148Japan Department of Surface and Plasma ScienceCharles University in Prague 18000Czech Republic
会议名称：《第18届国际真空大会》
会议日期：2010年
学科分类：08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 081102[工学-检测技术与自动化装置] 0811[工学-控制科学与工程]
关 键 词：HAXPES ARXPS nondestructive depth profiling
摘 要：We have developed high throughput angle resolved hard X-ray photoelectron spectroscopy （HXPS） instrument for laboratory use [1], which are composed by combining a monochromatic Cr Kα focused X-ray source and a wide acceptance objective for a spectrometer. The Cr Kα X-rays （5.4 keV） excited by micro focused electron beam are monochromatized and focused on to a sample surface by an ellipsoidal bent crystal monochromater with 300 mm Roland circle. The X-ray spot size is variable from 10 μm （1.25 W） to 200 μm （50 W） in diameter. In front of a VG Scienta R4000 10 kV spectrometer, a wide acceptance objective lens is integrated as a hybrid lens to collect photoelectrons emitted from a sample in the range of ±35 degrees for high sensitivity and angle resolved XPS spectra without tilting the sample. The total energy resolution of 0.53 eV was verified by Au Fermi edge measurement. A typical acquisition time for angle resolved Si 1s spectra of a SiO2（4 nm）/Si（001） overlayered thin film sample is around 1 hour in the emission angle of 10 to 80 degrees with 0.5 degrees angler resolution without tilting the sample. The Si 1s peak from the substrate at kinetic energy of 3569 eV is observed through the 25 nm thickness overlayered SiO2 on Si（001）.