The Study of Plasma Etching Processing Based on OES

作     者：Sun Jianghong Xu Xiaoli (School of ElectroMechanical Engineering Beijing Information Science & Technology University Beijing 100192 China) Wang Wei (College of Electroning Engineering Chongqing University of Posts and Telecommun-ications Chongqing 400065 China) 

会议名称：《第二届国际测量仪器与测试自动化学术会议》

会议日期：2008年

学科分类：080503[工学-材料加工工程] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：Sponsored by the National Natural Science Foundation (50375017) Beijing Natural Science Foundation(3062008) 

关 键 词：plasma etching OES endpoint detection PCA 

摘      要：正Optical emission spectroscopy（OES）diagnostics is a key technique for high density plasma *** can be used as a real-time sensor to qualify and predict the etching performance in an integrated circuit manufacturing *** on our developed ICP high density plasma etching reactors with Ocean optical emission spectroscopy systems,the OES data is collected from the polysilicon etching process,and principle component analysis（PCA）method be used to compress real time OES data,in order to implement real time processing of OES *** results show that the 405nm can relate to the degree of etching process,so it is suitable wavelength for state diagnostic and endpoint detection of polysilicon etching in high density ***,endpoint detection algorithm based on PCA was proposed to judge the endpoint of plasma etching.