Semi-insulating GaAs studies at different temperatures by positron spectroscopy
作者单位：Department of Physicsthe University of Hong KongPokfulam RoadHong Kong(SAR)P.R.C.
会议名称：《第九届全国正电子谱学会议》
会议日期：2005年
学科分类：07[理学] 070202[理学-粒子物理与原子核物理] 0702[理学-物理学]
摘 要：Positron Annihilation Lifetime Spectroscopy (PALS) is a powerful technique to measure the open volume (neutral or negative) type defect in different materials which can give the information of the defect size distribution. The temperature variable PALS system has been set up at HKU for study the positron trapping at defect level at low temperature. For the first trying, We have performed positron lifetime