Preparation and characterization of Pb（Zr,Ti）O3 thin films by a simple sol-gel process
作者单位：Shanghai Institute of CeramicsChinese Academy of SciencesChina Shanghai Institute of CeramicsChinese Academy of SciencesChina Shanghai Institute of CeramicsChinese Academy of SciencesChina Shanghai Institute of CeramicsChinese Academy of SciencesChina Shanghai Institute of CeramicsChinese Academy of SciencesChina Department of PhysicsZhongshan UniversityChina Department of PhysicsZhongshan UniversityChina
会议名称：《International Symposium of Young Scholars on Mechanics and Material Engineering for Science and Experiments》
会议日期：2001年
学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）]
基 金：This work is supported by the National Natural Science Foundation of China (No.59995520) Kuang-Cheng Wong Education Foundation of Hong Kong, China
关 键 词：PZT orientation electrical properties sol-gel process
摘 要：正 Lead zriconate titanate （PZT） （Zr/Ti=53/47） thin films on Pt/Ti/SiO2/Si substrates with highly preferential （111） orientation were successfully prepared by using a simple sol-gel process with rapid thermal annealing （RTA） at 550℃for 5 min. The results show that the highly （111）-oriented PZT films exhibit higher remnant polarization （Pr=32.3μC/cm2） and lower coercive field （Ec=75 kV/cm）. After 109 switching cycles, the net-switched polarization values for the capacitor under electric field 125 kV/cm drop to 56% of their initial values. At 100 kHz, the dielectric constant and dielectric loss of the film are 564 and 0.041, respectively.