SLIP LINE RESOLUTION IN ATOMIC RANGE ON PLASTICALLY DEFORMED AⅢ-BⅤSEMICONDUCTOR SURFACE BY SCANNING FORCE MICROSCOPY
作者单位：Inst.of CrystallographyUniv.of LeipzigGermany Inst.of PhysicsUniv.of BaselSwitzerland Inst.of CrystallographyUniv.of DresdenGermany
会议名称：《Sixteenth Congress of the International Union of Crystallography》
会议日期：1993年
学科分类：081704[工学-应用化学] 07[理学] 08[工学] 0817[工学-化学工程与技术] 0703[理学-化学] 070301[理学-无机化学]
摘 要：正During deformation of semiconductor-slices at elevated temperatures （400-600℃） slip lines raise at the（001） and（110） surface as traces of different {111} slip planes that can be detected by scanning force microscopy（SFM） with high *** used a GaP:Te/（001）GaP homoepitaxial layer system（grown by VPE-technique） as a model substance because of its very smooth surface and the transparency of