Development of a CMOS-compatible Electrostatically Actuated Diaphragm Chamber for Micropump Application
作者单位：Microsystems and MEMSMIMOS BERHADTechnology Park Malaysia57000 Kuala LumpurMalaysia
会议名称：《2008 9th International Conference on Solid-State and Integrated-Circuit Technology》
会议日期：2008年
学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学]
关 键 词：[IEEE Keyword]Fluids Etching Fabrication Pumps Micropumps Encapsulation Silicon
摘 要：This paper presents the development of a diaphragm chamber actuated electrostatically utilizing CMOS-compatible silicon micromachining fabrication process. The process consists of six photolithography steps and five chemical vapor depositions. Etching of the sacrificial oxide layer for the diaphragm chamber is achieved using etch-release holes perforated on the diaphragm, similar to via holes used in IC-fabrication method. From the analysis, the best encapsulation has been successfully demonstrated by growing LPCVD silicon nitride of thickness 0.9μm. Accomplishing this feat enables electrostatically actuated diaphragm chamber to be developed and in particular, will spur advancement in the development of a CMOS-compatible electrostatically actuated diaphragm micropump.