COMPUTATIONAL SCIENCE FOR SILICON-BASED NANOTECHNOLOGY
作者单位：Center Of Super-Diamond and Advanced Films （COSDAF） ＆ Department of Physics and Materials Science City University of Hong Kong Hong Kong S.A.R. China Center Of Super-Diamond and Advanced Films （COSDAF） ＆ Department of Physics and Materials Science City University of Hong Kong Hong Kong S.A.R. China
会议名称：《第8届国际材联电子材料国际研讨会》
会议日期：2002年
学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学]
摘 要：正 Silicon nanowire has recently attracted a great deal of attention because of its potential as interconnects and nanodevices for the continual miniaturization in conventional silicon technology. For the development of silicon-based nanotechnology, computational studies to guide or explain experiments are essential in order to reduce processing difficulties and cost. Towards this aim, we have conducted a systematic study on the growth mechanism and stability of silicon nanomaterials using various ab-initio approaches and molecular dynamics