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Raman Microscopy in Characterization of Silicon Devices

Raman Microscopy in Characterization of Silicon Devices

作     者:J.Kasim Y.Ma B.T.Tan Z.X.Shen 

作者单位:Division of Physics and Applied PhysicsSchool of Physical and Mathematical SciencesNanyang Technological University Physics DepartmentFaculty of ScienceNational University of Singapore 

会议名称:《第十三届全国光散射学术会议》

会议日期:2005年

学科分类:07[理学] 070302[理学-分析化学] 0703[理学-化学] 

摘      要:正Raman spectroscopy has been used extensively for material characterization in research and *** this paper,atomic force microscopy(AFM)and Raman mapping were employed to study the surface topography and the composition or stress mapping on silicon *** microscopy and AFM are complementary to each *** study on silicon devices is important because with stress engineering,

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