Raman Microscopy in Characterization of Silicon Devices
作者单位:Division of Physics and Applied PhysicsSchool of Physical and Mathematical SciencesNanyang Technological University Physics DepartmentFaculty of ScienceNational University of Singapore
会议名称:《第十三届全国光散射学术会议》
会议日期:2005年
学科分类:07[理学] 070302[理学-分析化学] 0703[理学-化学]
摘 要:正Raman spectroscopy has been used extensively for material characterization in research and *** this paper,atomic force microscopy(AFM)and Raman mapping were employed to study the surface topography and the composition or stress mapping on silicon *** microscopy and AFM are complementary to each *** study on silicon devices is important because with stress engineering,