Behind the induced growth of ZnO thin films by crystallized amorpous ZnO:Stranski-Krastanov model

作     者：Zhijun Wang1 2 Mucui Ni 2 Li Liu 2 Lijun Song 3 Jinbao Zhang 2 Shouchun Li 2 Haiying Li 2 Lianyuan Wang 2 Yunxian Tian 2 Zeheng Wang 2 Aiguo Wei 2 Wei Li 2 1 National Laboratory of Superhard Materials Jilin University Changchun 130012 China 2 Physics Department Jilin University Changchun 130061 China 3 Institute of Applied Physics School of Science Changchun University Changchun 130022 China 

作者单位：National Laboratory of Superhard MaterialsJilin UniversityChangchun 130012China Physics DepartmentJilin UniversityChangchun 130061China Physics DepartmentJilin UniversityChangchun 130061China Institute of Applied PhysicsSchool of ScienceChangchun UniversityChangchun 130022 China 

会议名称：《第六届国际氧化锌及相关材料研讨会》

会议日期：2010年

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：The Project-sponsored by SRF for ROCS, SEM., the Jilin Province Science and Technology Development Program Project of China (Grant No 20040564 and 20090529) Innovation Project of Scientific Frontiers and Interdisciplines of Jilin University(Grant No 200903329) 

摘      要：正We have grown ZnO thin films by crystallized amorphous ZnO as seed crystalline at 80℃.1 In this paper, we studied the growth model of ZnO thin films. Basically, the three chemical reactions can be described as following: