THE DEPENDENCE OF ELECTRICAL CHARACTERIZATION ON INTERFACE STRUCTURE OF PTSI/STRAINED-SI1-XGEX/SI SCHOTTKY DIODES

作     者：Meicheng Li, Liancheng Zhao, Wei Cai, Xuekang Chen School of Materials Science and Engineering, Harbin Institute of Technology, P. O. Box 428, Harbin 150001, China. E-mail:meicheng@***, Tel: +86-451-6413115 Fax: +86-451-6415776 Laboratory of Laser Molecular Beam Epitaxy, Lanzhou Institute of Physics, Lanzhou, China. 

会议名称：《第8届国际材联电子材料国际研讨会》

会议日期：2002年

学科分类：08[工学] 0803[工学-光学工程] 

摘      要：By combining pulsed laser deposition (PLD) and molecular beam epitaxy (MBE) we have successfully demonstrated PtSi/strained SiGe (x=0, 0.2 and 0.25) Schottky barrier diodes (SBD) with extended cutoff wavelengths. Pt was deposited by PLD on the SiGe alloys with a thin Si sacrificial cap layer fabricated by MBE. By the reaction of deposited Pt film on Si sacrificial cap layer silicide SBD have been fabricated. The sacrificial silicon eliminates the segregation effects and Fermi level pinning that occurs of the Pt reacts