Low-temperature preparation of β-phase Si3N4 via ICPECVD

作     者：ZHAO Wen-feng~(1,2),CHEN Jun-fang~(1*),LI wei~1,ZHANG hongbin~1,MENG ran~1,LAI xiu-qiong~1 (1.School of Physics and Telecommunications Engineering,South China Normal University,Guangzhou,510631,china 2.College of Engineering,south china agricultural university,Guangzhou,510642,china) 

会议名称：《The 9th Asia-Pacific Conference on Plasma Science and Technology and 21st Symposium on Plasma Science for Materials》

会议日期：2008年

学科分类：07[理学] 070204[理学-等离子体物理] 0702[理学-物理学] 

关 键 词：ICP Si3N4 nanopowder 

摘      要：The SiN nanopowder was prepared by means of ICPECVD by decomposing of SiH and *** ion density in the reaction chamber was diagnosed by a Langmuir *** by FT-IR,TEM and XRD reveals the characteristic of *** results indicate that SiN nanopowder synthesized by ICPECVD is hexagonal cellβ-SiN and the particles is spherical with diameter about 20nm,the distribution of those particles is symmetrical.