Inter-Layer Energy Transfer through Wetting-Layer States in Bi-layer InGaAs/GaAs Quantum-Dot Structures with Thick Barriers

作     者：徐章程 张雅婷 Jφrn M. Hvam Yoshiji Horikoshi 

作者机构：Nno-photonics Group Key Laboratory of Weak-Light Nonlinear Photonics Materials (MOE) TEDA College Nankai University Tianjin 300457 Department of Communications Optics and Materials and Nano.DTU Technical University of Denmark DK-2800 Lynby Denmark School of Science & Engineering Waseda University Sinjuku-Ku Tokyo 169-8555 Japan 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2009年第26卷第5期

页      面：214-216页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 07[理学] 0809[工学-电子科学与技术（可授工学、理学学位）] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 10774078 and 60506013  the Program for New Century Excellent Talents in University (NCET-06-0213)  the SRF for ROCS (SEM)  the Startup Fund for New Employees of Nankai University  and the Marubun Research Promotion Foundation 

主　　题：gamma-ray bursts gamma-rays relativity 

摘      要：The inter-layer energy transfer in a bi-layer InGaAs/GaAs quantum dot structure with a thick GaAs barrier is studied using temperature-dependent photoluminescence. The abnormal enhancement of the photoluminescence of the QDs in the layer with a larger amount of coverage considering the resonant Forster energy transfer between the at 110K is observed, which can be explained by wetting layer states at elevated temperatures.