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Molecular dynamics simulation of the material removal in the scratching of 4H-SiC and 6H-SiC substrates

Molecular dynamics simulation of the material removal in the scratchingof 4H-SiC and 6H-SiC substrates

作     者:Zige Tian Xun Chen Xipeng Xu Zige Tian;Xun Chen;Xipeng Xu

作者机构:Institute of Manufacturing EngineeringHuaqiao UniversityXiamenFujian ProvincePeople’s Republic of China Faculty of Engineering and TechnologyLiverpool John Moores UniversityLiverpoolUnited Kingdom 

出 版 物:《International Journal of Extreme Manufacturing》 (极端制造(英文))

年 卷 期:2020年第2卷第4期

页      面:86-100页

核心收录:

学科分类:081702[工学-化学工艺] 08[工学] 0817[工学-化学工程与技术] 

基  金:financial support from National Natural Science Foundation of China(Grant No.51835004 and 51575197) Huaqiao University International Cultivation Program for Outstanding Postgraduates and Subsidized Projec for Postgraduates’Innovative Fund in Scientific Research of Huaqiao University(No.18011080010) 

主  题:material removal mechanism molecular dynamics simulation subsurface defects scratching 4H-SiC and 6H-SiC 

摘      要:Single crystal silicon carbide(SiC)is widely used for optoelectronics *** to the anisotropic characteristics of single crystal materials,the C face and Si face of single crystal SiC have different physical properties,which may fit for particular application *** paper presents an investigation of the material removal and associated subsurface defects in a set of scratching tests on the C face and Si face of 4H-SiC and 6H-SiC materials using molecular dynamics *** investigation reveals that the sample material deformation consists of plastic,amorphous transformations and dislocation slips that may be prone to brittle *** results showed that the material removal at the C face is more effective with less amorphous deformation than that at the Si *** a phenomenon in scratching relates to the dislocations on the basal plane(0001)of the SiC *** defects were reduced by applying scratching cut depths equal to integer multiples of a half molecular lattice thickness,which formed a foundation for selecting machining control parameters for the best surface quality.

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