Strong electron-ion coupling in gradient halide perovskite heterojunction

作     者：Hongye Chen Liaoyu Wang Chun Shen Jiahuan Zhang Wanlin Guo Hongye Chen;Liaoyu Wang;Chun Shen;Jiahuan Zhang;Wanlin Guo

作者机构：State Key Laboratory of Mechanics and Control of Mechanical StructuresKey Laboratory for Intelligent Nano Materials and Devices of Ministry of EducationInstitute of Nano ScienceNanjing University of Aeronautics and AstronauticsNanjing 210016China 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2021年第14卷第4期

页      面：1012-1017页

核心收录：

学科分类：081704[工学-应用化学] 07[理学] 08[工学] 0817[工学-化学工程与技术] 070303[理学-有机化学] 0703[理学-化学] 

基　　金：by the National Key Research and Development Program of China(No.2019YFA0705400) the Nationd Natural Science Foundation of China(No.51535005) the Research Fund of State Key Laboratory of Mechanics and Control of Mechanical Structures(Nos.MCMS-I-0418K01,MCMS-I-0419K01) the Fundam ental Research Funds for the Central Universities(Nos.NZ2020001,NC2018001,NP2019301,NJ2019002) A Project Funded by the Priority Academic Program Development of Jiangsu Higher Education Institutions and Postgraduate Research&Practice Innovation Program of Jiangsu Province(No.KYCX17_0228) 

主　　题：halide perovskite films gradient heterojunctions electron-ion couplings photoluminescence 

摘      要：The electron-ion coupling in iontronics has great significance and potential for energy conversion and storage ***,it is a substantial challenge to integrate iontronics into all-solid-state semiconductor circuits and explore the electron-ion coupling in semiconductor ***,by utilizing the organic-inorganic halide perovskite,we fabricate a planar heterojunction with a gradient distribution of halide *** diode-like halide migration was investigated by bias voltage induced asymmetric blue shift in photoluminescence *** pseudo-ionic diode behaviour was found to result from asymmetric charge injection characterized by I-V curves and gradient-halides-induced vacancy hopping indicated by energy dispersive spectroscopy(EDS).The planar gradient perovskite heterojunction provides a viable route for extending iontronic devices into the regime of all-solid-state semiconductors.