Reversible magnetism transition at ferroelectric oxide heterointerface

作     者：Jialu Chen Zijun Zhang Liang Luo Yunhao Lu Cheng Song Di Cheng Xing Chen Wei Li Zhaohui Ren Jigang Wang He Tian Ze Zhang Gaorong Han 陈嘉璐;张子君;罗亮;陆赟豪;宋成;程荻;陈星;李玮;任召辉;王继刚;田鹤;张泽;韩高荣

作者机构：State Key Laboratory of Silicon MaterialsSchool of Materials Science and EngineeringCyrus Tang Center for Sensor Materials and ApplicationZhejiang UniversityHangzhou 310027China Center of Electron MicroscopeSchool of Materials Science and EngineeringZhejiang UniversityHangzhou 310027China Department of Physics and AstronomyIowa State University and Ames Laboratory-USDOEAmes1A 50011USA Department of PhysicsZhejiang UniversityHangzhou 310027China Key Laboratory of Advanced Materials(Ministry of Education)School of Materials Science and EngineeringTsinghua UniversityBeijing 100084China 

出 版 物：《Science Bulletin》 (科学通报（英文版）)

年 卷 期：2020年第65卷第24期

页      面：2094-2099,M0005页

核心收录：

学科分类：08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：supported by the National Natural Science Foundation of China (U1909212, U1809217, and 11474249) supported by the U.S. Department of Energy, Office of Basic Energy Science, Division of Materials Sciences and Engineering (Ames Laboratory is operated for the U.S. Department of Energy by Iowa State University under Contract No. DE-AC02-07CH11358) 

主　　题：SrTiO3/PbTiO3 Interface Ferroelectric polarization Magnetic transition 

摘      要：Oxide heterointerface is a platform to create unprecedented two-dimensional electron gas, superconductivity and ferromagnetism, arising from a polar discontinuity at the interface. In particular, the ability to tune these intriguing effects paves a way to elucidate their fundamental physics and to develop novel electronic/magnetic devices. In this work, we report for the first time that a ferroelectric polarization screening at SrTiO_(3)/PbTiO_(3) interface is able to drive an electronic construction of Ti atom, giving rise to room-temperature ferromagnetism. Surprisingly, such ferromagnetism can be switched to antiferromagnetism by applying a magnetic field, which is reversible. A coupling of itinerant electrons with local moments at interfacial Ti3d orbital was proposed to explain the magnetism. The localization of the itinerant electrons under a magnetic field is responsible for the suppression of magnetism. These findings provide new insights into interfacial magnetism and their control by magnetic field relevant interfacial electrons promising for device applications.