A comparative study of digital low dropout regulators

作     者：Mo Huang Yan Lu Rui P.Martins Mo Huang;Yan Lu;Rui P.Martins

作者机构：State Key Laboratory of Analog and Mixed-Signal VLSIInstitute of MicroelectronicsDECE/FSTUniversity of MacaoMacaoChina On leave from the Instituto Superior TécnicoUniversidade de LisboaLisbon1049-001Portugal 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2020年第41卷第11期

页      面：52-60页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 080801[工学-电机与电器] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学] 

基　　金：supported by the National Natural Science Foundation of China(No.61974046) the Provincial Key Research and Development Program of Guangdong(2019B010140002) the Macao Science&Technology Development Fund(FDCT)145/2019/A3 and SKL-AMSV(UM)-2020-2022 

主　　题：low dropout regulator(LDO) digital control fast transient response power supply rejection(PSR) integrated voltage regulator 

摘      要：Granular power management in a power-efficient system on a chip(SoC)requires multiple integrated voltage regulators with a small area,process scalability,and low supply *** on-chip analog low-dropout regulators(ALDOs)can hardly meet these requirements,while digital LDOs(DLDOs)are good ***,the conventional DLDO,with synchronous control,has inherently slow transient response limited by the power-speed ***,it has a poor power supply rejection(PSR),because the fully turned-on power switches in DLDO are vulnerable to power supply *** this comparative study on DLDOs,first,we compare the pros and cons between ALDO and DLDO in ***,we summarize the recent DLDO advanced techniques for fast transient response and PSR ***,we discuss the design trends and possible directions of DLDO.