A Simplified Simulation Procedure and Analysis of a Photovoltaic Solar System Using a Single Diode Model
A Simplified Simulation Procedure and Analysis of a Photovoltaic Solar System Using a Single Diode Model作者机构：Department of Physics University of Nairobi Nairobi Kenya
出 版 物：《Journal of Power and Energy Engineering》 (电力能源（英文）)
年 卷 期：2020年第8卷第9期
页 面：65-93页
主 题：Five-Parameter Model Ideality Factor Saturation Current Series and Shunt Resistances
摘 要：A single diode model for a photovoltaic solar module is the most ideal and quick way of analyzing the module characteristics before implementing them in a solar plant. Solar modules manufacturers provide information for three critical points that are essential in I-V, P-V or P-I curves. In this study, we propose four separate simulation procedures to estimate the five-model parameters of an analogous single diode equivalent circuit by utilizing three cardinal points of the photovoltaic module I-V curve, described from experimental data using a solar simulator and manufacturer’s datasheet. The main objective is to extract and use the five unknown parameters of a single diode model to describe the photovoltaic system using I-V ad P-V plots under different environmental conditions. The most influential parameters that greatly alter the cardinal points defined at short circuit point (SCP), the maximum power point (MPP) and the open circuit point(OCP) are the ideality factor (n) and the diode saturation current (Io). For a quick and fast convergence, we have determined the optimal ideality factor (no) and optimal saturation current (Ioopt) as the primary parameters by first assuming the optimal values of Rsh, Rs and Iph at standard test conditions (STC). Further, we evaluated the e
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