Review of resistive switching mechanisms for memristive neuromorphic devices

作     者：Rui Yang 杨蕊

作者机构：State Key Laboratory of Material Processing and Die&Mould TechnologySchool of Materials Science and EngineeringHuazhong University of Science and TechnologyWuhan 430074China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2020年第29卷第9期

页      面：1-14页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.U1832116 and 51772112) Fundamental Research Funds for the Central Universities,China(Grant No.HUST:2016YXZD058) 

主　　题：memristive devices resistive switching mechanisms neuromorphic computing 

摘      要：Memristive devices have attracted intensive attention in developing hardware neuromorphic computing systems with high energy efficiency due to their simple structure,low power consumption,and rich switching dynamics resembling biological synapses and neurons in the last *** demonstrations have been achieved in memristive synapses neurons and neural networks in the last few *** dynamics are involved in the data processing and storage in biological neurons and synapses,which ask for carefully tuning the switching dynamics of the memristive *** that switching dynamics of the memristive devices are closely related to switching ***,from the perspective of switching dynamics modulations,the mainstream switching mechanisms including redox reaction with ion migration and electronic effect have been systemically *** approaches to tune the switching dynamics in the devices with different mechanisms have been ***,some other mechanisms involved in neuromorphic computing are briefly introduced.