Investigation on the strain of SiGe/Si heteroepitaxial system during high temperature annealing byBiBS/Channeling

作     者：CHENChang－Chun ZHANGShi－Li 

作者机构：LaboratoryofNuclearAnalysesandTechniquesShanghaiInstituteofNuclearResearchtheChineseAcademyofSciencesShanghai201800 KungligaTekniskaHoegskolanDepartmentofElectronicsElectrum22 

出 版 物：《Nuclear Science and Techniques》 (核技术（英文）)

年 卷 期：2001年第12卷第4期

页      面：295-301页

核心收录：

学科分类：08[工学] 0807[工学-动力工程及工程热物理] 080501[工学-材料物理与化学] 0827[工学-核科学与技术] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学] 0801[工学-力学（可授工学、理学学位）] 

基　　金：Supported by the National Natural Sciences Foundation of China (10075072) 

主　　题：合金薄膜 高温退火 集成电路 

摘      要：The influence of the high temperature processing on the strain stored in SiGe hetero-epilayer was studied by means of RBS/Channeling. Channeling angular scan along the , axial direction in the (100) plane was used to characterize the tetragonal distortion in the SiGe strained layer. The strained crystal structure parameters were acquired by combining the determination of strain with the elasticity theory. It is shown that the strain stored in the SiGe epilayer has significantly change (relaxation factor from 0.023 to 0.84) after high temperature annealing. The potential strain relaxation mechanisms were discussed.