Effect of Stress-Dependent Thermal Conductivity on Thermo-Mechanical Coupling Behavior in GaN-Based Nanofilm Under Pulse Heat Source
在在脉搏热来源下面的基于陷阱的 Nanofilm 的 Thermo 机械的联合行为上的压力依赖者热电导率的效果作者机构:Department of Engineering Mechanicsand Key Laboratory of Soft Machines and Smart Devices of Zhejiang ProvinceZhejiang UniversityHangzhou310027China Department of Mechanical EngineeringThe Hong Kong Polytechnic UniversityHong KongChina
出 版 物:《Acta Mechanica Solida Sinica》 (固体力学学报(英文版))
年 卷 期:2021年第34卷第1期
页 面:27-39页
核心收录:
学科分类:07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 0702[理学-物理学]
基 金:This research is supported by the National Natural Science Foundation of China(Grant Nos.11772294,11621062) the Fundamental Research Funds for the Central Universities(Grant No.2017QNA4031)
主 题:Multi-physical effect Stress-dependent thermal conductivity Prestress fields Heat transfer behavior GaN-based nanofilm Finite element method
摘 要:The thermal properties of a nanostructured semiconductor are affected by multi-physical fields,such as stress and electromagnetic fields,causing changes in temperature and strain *** this work,the influence of stress-dependent thermal conductivity on the heat transfer behavior of a GaN-based nanofilm is *** finite element method is adopted to simulate the temperature distribution in a prestressed nanofilm under heat *** results demonstrate the effect of stress field on the thermal conductivity of GaN-based nanofilm,namely,the prestress and the thermal stress lead to a change in the heat transfer behavior in the *** the same heat source,the peak temperature of the film with stress-dependent thermal conductivity is significantly lower than that of the film with a constant thermal conductivity and the maximum temperature difference can reach 8.2 *** results could be useful for designing GaN-based semiconductor devices with higher reliability under multi-physical fields.