Effect of Stress-Dependent Thermal Conductivity on Thermo-Mechanical Coupling Behavior in GaN-Based Nanofilm Under Pulse Heat Source

作     者：Qicong Li Xiaoya Tang Linli Zhu Haihui Ruan Qicong Li;Xiaoya Tang;Linli Zhu;Haihui Ruan

作者机构：Department of Engineering Mechanicsand Key Laboratory of Soft Machines and Smart Devices of Zhejiang ProvinceZhejiang UniversityHangzhou310027China Department of Mechanical EngineeringThe Hong Kong Polytechnic UniversityHong KongChina 

出 版 物：《Acta Mechanica Solida Sinica》 (固体力学学报（英文版）)

年 卷 期：2021年第34卷第1期

页      面：27-39页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：This research is supported by the National Natural Science Foundation of China(Grant Nos.11772294,11621062) the Fundamental Research Funds for the Central Universities(Grant No.2017QNA4031) 

主　　题：Multi-physical effect Stress-dependent thermal conductivity Prestress fields Heat transfer behavior GaN-based nanofilm Finite element method 

摘      要：The thermal properties of a nanostructured semiconductor are affected by multi-physical fields,such as stress and electromagnetic fields,causing changes in temperature and strain *** this work,the influence of stress-dependent thermal conductivity on the heat transfer behavior of a GaN-based nanofilm is *** finite element method is adopted to simulate the temperature distribution in a prestressed nanofilm under heat *** results demonstrate the effect of stress field on the thermal conductivity of GaN-based nanofilm,namely,the prestress and the thermal stress lead to a change in the heat transfer behavior in the *** the same heat source,the peak temperature of the film with stress-dependent thermal conductivity is significantly lower than that of the film with a constant thermal conductivity and the maximum temperature difference can reach 8.2 *** results could be useful for designing GaN-based semiconductor devices with higher reliability under multi-physical fields.