Oxygen-induced controllable p-type doping in 2D semiconductor transition metal dichalcogenides

作     者：Qijie Liang Jian Gou Arramel Qian Zhang Wenjing Zhang Andrew Thye Shen Wee Qijie Liang;Jian Gou;Arramel;Qian Zhang;Wenjing Zhang;Andrew Thye Shen Wee

作者机构：SZU-NUS Collaborative Innovation Center for Optoelectronic Science&TechnologyInternational Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of EducationCollege of Optoelectronic EngineeringShenzhen UniversityShenzhen518060China Department of PhysicsNational University of Singapore2 Science Drive 3Singapore117551Singapore Department of Materials Science and EngineeringNational University of SingaporeSingapore117574Singapore Centre for Advanced 2D MaterialsNational University of SingaporeBlock S146 Science Drive 2Singapore117546Singapore 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2020年第13卷第12期

页      面：3439-3444页

核心收录：

学科分类：081704[工学-应用化学] 07[理学] 08[工学] 0817[工学-化学工程与技术] 0703[理学-化学] 070301[理学-无机化学] 

基　　金：This work was financially supported by the National Natural Science Foundation of China(No.51472164) Shenzhen Peacock Plan(No.KQTD2016053112042971) the Educational Commission of Guangdong Province(Nos.2015KGJHZ006 and 2016KCXTD006) the Science and Technology Planning Project of Guangdong Province(No.2016B050501005) A.T.S.W.acknowledges funding support from MOE Tier 2 grant R 144-000-382-112,A*STAR Pharos Program(No.1527300025) facility support from the NUS Centre for Advanced 2D Materials(CA2DM) 

主　　题：two-dimensional transition metal dichalcogenides oxygen induced doping oxygen substitution charge transfer 

摘      要：Exposure to oxygen alters the physical and chemical properties of two-dimensional(2D)transition metal dichalcogenides(TMDs).In particular,oxygen in the ambient may influence the device stability of 2D TMDs over *** the doping of 2D TMDs,especially hole doping is highly desirable towards their device ***,controllable oxygen-induced p-type doping in a range of hexagonal(MoTe2,WSe2,MoSe2 and PtSe2)and pentagonal(PdSe2)2D TMDs are *** tunneling microscopy,electrical transport and X-ray photoelectron spectroscopy are used to probe the origin of oxygen-derived hole *** mechanisms are postulated that contribute to the hole doping in 2D TMDs,namely charge transfer from absorbed oxygen molecules,surface oxides,and chalcogen atom *** work provides insights into the doping effects of oxygen,enabling the engineering of 2D TMDs properties for nanoelectronic applications.