Fabrication and electrical characteristics of flash-sintered SiO_(2)-doped ZnO-Bi_(2)O_(3)-MnO_(2) varistors

作     者：Pai PENG Yujun DENG Jingpeng NIU Liyi SHI Yunzhu MEI Sanming DU Juan LIU Dong XU 

作者机构：Key Laboratory of Green Fabrication and Surface Technology of Advanced Metal Materials(Anhui University of Technology)Ministry of EducationMa'anshan 243002China Key Laboratory of Etallurgical Emission Reduction&Resources Recycling(Anhui University of Technology)Ministry of EducationMa'anshan 243002China Research Center of Nano Science and TechnologyShanghai UniversityShanghai 200444China National United Engineering Laboratory for Advanced Bearing TribologyHenan University of Science and TechnologyLuoyang 471023China 

出 版 物：《Journal of Advanced Ceramics》 (先进陶瓷（英文）)

年 卷 期：2020年第9卷第6期

页      面：683-692页

核心收录：

学科分类：080801[工学-电机与电器] 0808[工学-电气工程] 08[工学] 

基　　金：financially supported by National Natural Science Foundation of China(Grant Nos.51802003 and 51572113) State Key Laboratory of New Ceramic and Fine Processing Tsinghua University(No.KF201808) the Project National United Engineering Laboratory for Advanced Bearing Tribology(No.201912) 

主　　题：flash sintering SiO_(2)additive ZBMS varistors electrical properties 

摘      要：The dense ZnO-Bi_(2)O_(3)-MnO_(2)(ZBMS)varistors for x=0,1,2,3 wt% were fabricated by flash sintering method under the low temperature of 850℃ within 2 *** sample temperature was estimated by a black body radiation model in the flash sintering *** crystalline phase assemblage,density,microstructure,and electrical characteristics of the flash-sintered ZBMS varistors with different SiO_(2)-doped content were *** to the XRD analysis,many secondary phases were detected due to the SiO_(2) ***,the average grain size decrease with increasing SiO_(2)-doped *** improved nonlinear characteristics were obtained in SiO_(2)-doped samples,which can be attributed to the ion migration and oxygen absorption induced by the doped SiO_(2).The flash-sintered ZBMS varistor ceramics for x=2 wt% exhibited excellent comprehensive electrical properties,with the nonlinear coefficient of 24.5,the threshold voltage and leakage current of 385 V·mm^(-1 )and 11.8μA,respectively.