A 143.2–168.8-GHz signal source with 5.6 dBm peak output power in a 130-nm SiGe BiCMOS process

作     者：Peigen ZHOU Jixin CHEN Pinpin YAN Zhigang PENG Debin HOU Zhe CHEN Wei HONG Peigen ZHOU;Jixin CHEN;Pinpin YAN;Zhigang PENG;Debin HOU;Zhe CHEN;Wei HONG

作者机构：State Key Laboratory of Millimeter Waves Southeast University 

出 版 物：《Science China(Information Sciences)》 (中国科学:信息科学(英文版))

年 卷 期：2020年第63卷第12期

页      面：275-277页

核心收录：

学科分类：0808[工学-电气工程] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0812[工学-计算机科学与技术（可授工学、理学学位）] 

基　　金：supported by National Natural Science Foundation of China (Grant Nos. 61701114, 61941103) National Key Research and Development Program (Grant No. 2018YFB1801602) Scientific Research Foundation of Graduate School of Southeast University (Grant No. YBJJ1811) China Scholarship Council (CSC) 

主　　题：Broadband D-Band Frequency Doubler SiGe BiCMOS Signal Source Terahertz VCO 

摘      要：Dear editor,With the development of silicon-based processes,a variety of RF devices have become possible to be designed at frequencies above 100 GHz [1]. Besides, sub-terahertz systems operating in D-Band have the potential to be applied to a wide range of applications, such as high-resolution radar, energy detection, and broadband ultra high-speed communication [2].