Influence of oxygen gas content on the structural and optical properties of ZnO thin films deposited by RF magnetron sputtering at room temperature
Influence of oxygen gas content on the structural and optical properties of ZnO thin films deposited by RF magnetron sputtering at room temperature作者机构:College of Physics Science and Technology Hebei University Baoding 071002 China Baoding University Baoding 071000 China College of Electronic and Information Engineering Hebei University Baoding 071002 China
出 版 物:《Rare Metals》 (稀有金属(英文版))
年 卷 期:2011年第30卷第2期
页 面:170-174页
核心收录:
学科分类:080903[工学-微电子学与固体电子学] 07[理学] 0809[工学-电子科学与技术(可授工学、理学学位)] 08[工学] 0703[理学-化学]
基 金:supported by the National Natural Science Foundation of China (Nos. 60876055 and11074063) the Natural Science foundation of Hebei Province,China (Nos. E2008000620 and E2009000207) the Specialized Research Fund for the Doctoral Program of Higher Education of China (No. 20091301110002) the Key Basic Research Program of Hebei Provincial Applied Basic Research Plan (No. 10963525D)
主 题:thin films zinc oxide magnetron sputtering oxygen structural properties optical properties
摘 要:Zinc oxide (ZnO) thin films were deposited on sapphire (0001) substrates at room temperature by radiofrequency (RF) magnetron sputtering at oxygen gas contents of 0%, 25%, 50% and 75%, respectively. The influence of oxygen gas content on the structural and optical properties of ZnO thin films was studied by a surface profile measuring system, X-ray diffraction analysis, atomic force microscopy, and UV spectro- photometry. It is found that the size of ZnO crystalline grains increases first and then decreases with the increase of oxygen gas content, and the maximum grain size locates at the 25% oxygen gas content. The crystalline quality and average optical transmittance (〉90%) in the visi- ble-light region of the ZnO film prepared at an oxygen gas content of 25% are better than those of ZnO films at the other contents. The obtained results can be attributed to the resputtefing by energetic oxygen anions in the growing process.