Direct bandgap engineering with local biaxial strain in few-layer MoS2 bubbles
作者机构：Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing100190China School of Physical SciencesCAS Key Laboratory of Vacuum PhysicsUniversity of Chinese Academy of SciencesBeijing100190China Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information&Quantum Physics(CAS)University of Science and Technology of ChinaHefei230026China Songshan Lake Materials LaboratoryDongguan523808China
出 版 物：《Nano Research》 (纳米研究（英文版）)
年 卷 期：2020年第13卷第8期
页 面：2072-2078页
核心收录：
学科分类：080903[工学-微电子学与固体电子学] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学]
基 金：This work was financially supported by the National Key Research and Development Program of China(Nos.2016YFA0200400,2016YFA0200800,2016YFA0200603,2017YFA0204904,2019YFA0308000,and 2018YFA0704200) the National Natural Science Foundation of China(Nos.61888102,11574369,11674387,11574368,11574385,and 11874405) the Key Research Program of Frontier Sciences of CAS(No.QYZDJSSWSLH042) the Youth Innovation Promotion Association of CAS(No.2019007)
主 题：two-dimensional(2D)layered materials transition metal dichalcogenides band engineering local strain
摘 要：Nano Research volume 13,pages2072–2078(2020)Cite this article 211 Accesses Metrics details Abstract Strain engineering provides an important strategy to modulate the optical and electrical properties of semiconductors for improving devices performance with mechanical force or thermal expansion ***,we present the investigation of the local strain distribution over few-layer MoS2 bubbles,by using scanning photoluminescence and Raman *** observe the obvious direct bandgap emissions with strain in the few-layer MoS2 bubble and the strain-induced continuous energy shifts of both resonant excitons and vibrational modes from the edge of the MoS2 bubble to the center(10μm scale),associated with the oscillations resulted from the optical interference-induced temperature *** understand these results,we perform ab initio simulations to calculate the electronic and vibrational properties of few-layer MoS2 with biaxial tensile strain,based on density functional theory,finding good agreement with the experimental *** study suggests that local strain offers a convenient way to continuously tune the physical properties of a few-layer transition metal dichalcogenides(TMDs)semiconductor,and opens up new possibilities for band engineering within the 2D plane.
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