Straight SiO_x nanorod Yjunctions

作     者：ZHU Guang ZOU XiaoPing CHENG Jin WANG MaoFa SU Yi 

作者机构：Beijing Key Laboratory for SensorBeijing Information Science&Technology UniversityBeijing 100101China Department of Electronic and Electrical EngineeringSuzhou CollegeAnhui 234000China 

出 版 物：《Science China(Technological Sciences)》 (中国科学（技术科学英文版）)

年 卷 期：2009年第52卷第1期

页      面：32-36页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：Supported by the Academic Human Resources Development in Institutions of Higher Learning under the Jurisdiction of Beijing the Program of Science & Technol-ogy Activity for Chinese Homecoming Fellow Abroad Research Program of Beijing Key Laboratory for Sensor (Grant No. KM200810772009) 

主　　题：SiO_x nanorod Y junction nanostructure 

摘      要：Novel straight silicon oxide [SiO x (1x2)] nanorod Y junctions have been synthesized on Si plate by thermal evaporation of mixed powders of silica and carbon nanofibers at 1300°C and condensation on a Si substrate without assistance of any catalyst. The synthesized samples were characterized by means of scanning electron microscopy, transmission electron microscopy, high resolution transmission electron microscopy, and energy dispersive X-ray spectroscopy. The results suggested that the straight nanorod Y junctions are amorphous and consist only of elements Si and O, and these rods with diameters about 50–200 nm have a neat smooth surface. The growth of such silicon oxide nanorods may be a result of the second nucleation on the surface of rods causing a change in the growth direction of silicon oxide nanorods developed.