Mid-Infrared InAs/GaSb Superlattice Planar Photodiodes Fabricated by Metal–Organic Chemical Vapor Deposition

作     者：赵宇 滕龑 缪静君 吴启花 高晶晶 李欣 郝修军 赵迎春 董旭 熊敏 黄勇 Yu Zhao;Yan Teng;Jing-Jun Miao;Qi-Hua Wu;Jing-Jing Gao;Xin Li;Xiu-Jun Hao;Ying-Chun Zhao;Xu Dong;Min Xiong;Yong Huang

作者机构：Key Lab of Nanodevices and ApplicationsSuzhou Institute of Nano-tech and Nano-bionicsChinese Academy of SciencesSuzhou 215123China Nano-fabrication FacilitySuzhou Institute of Nano-tech and Nano-bionicsChinese Academy of SciencesSuzhou 215123China 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2020年第37卷第6期

页      面：115-118页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0803[工学-光学工程] 0704[理学-天文学] 

基　　金：Supported by the National Natural Science Foundation of China(Grant Nos.61874179 61804161 and 61605236)。 

主　　题：InAs/GaSb dopant planar 

摘      要：Mid-wavelength infrared planar photodiodes were demonstrated,in which both the epitaxy growth of InAs/GaSb superlattices and the thermal diffusion of p-type dopant were performed in production-scale metal-organic chemical vapor deposition reactors.The formation of a planar homojunction was confirmed by secondary ion mass spectroscopy and itsⅠ-Ⅴcharacteristics.A cut-off wavelength around 5μm was determined in 77 K optical characterization,and photo-current as high as 600 nA was collected from a reverse-biased planar diode of 640μm diameter.These preliminary results were obtained despite the structural degradation revealed by x-ray diffraction,and we attribute the degradation to the concert of thermal annealing and high Zn concentration behind the diffusion front.