基于范德华铁电异质结的具有亚5nm沟道亚热电子场效应晶体管

作     者：王峰 刘佳 黄文浩 程瑞清 尹蕾 王俊俊 Marshet Getaye Sendeku 张玉 詹雪莹 单崇新 王振兴 何军 Feng Wang;Jia Liu;Wenhao Huang;Ruiqing Cheng;Lei Yin;Junjun Wang;Marshet Getaye Sendeku;Yu Zhang;Xueying Zhan;Chongxin Shan;Zhenxing Wang;Jun He

作者机构：CAS Center for Excellence in NanoscienceCAS Key Laboratory of Nanosystem and Hierarchical FabricationNational Center for Nanoscience and TechnologyBeijing 100190China School of Physics and TechnologyWuhan UniversityWuhan 430072China University of Chinese Academy of SciencesBeijing 100049China Henan Key Laboratory of Diamond Optoelectronic Materials and DevicesKey Laboratory of Material Physics(Ministry of Education)School of PhysicsZhengzhou UniversityZhengzhou 450052China 

出 版 物：《Science Bulletin》 (科学通报（英文版）)

年 卷 期：2020年第65卷第17期

页      面：1444-1450,M0003页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：This work was supported by National Key R&D Program of China(2018YFA0703700 and 2016YFA0200700) the Strategic Priority Research Program of Chinese Academy of Sciences(XDB30000000) the National Natural Science Foundation of China(61625401,61851403,11674072,91964203,and 61804146) CAS Key Laboratory of Nanosystem and Hierarchical Fabrication The authors also gratefully acknowledge the support of Youth Innovation Promotion Association CAS. 

主　　题：场效应晶体管 开关特性 热电子 异质结 亚阈值摆幅 沟道宽度 器件 开关比 

摘      要：本文展示了基于铁电范德华异质结的具有小于5 nm沟道宽度的二维亚热电子场效应晶体管.该器件分别由石墨烯作为电极,二硫化钼作为导电沟道, CuInP2S6作为铁电介电层.研究表明,所制造的长沟道器件在室温下具有3个数量级的开关比,几乎无回滞,并具有亚热电子的开关特性.此外,本文使用金属碳纳米管作为有效的栅极制备了超短沟道器件.该器件同样表现出亚热电子开关特性,室温下亚阈值摆幅最小可达6.1 mV/dec.