Enhancing the graphene photocurrent using surface plasmons and a p-n junction

作     者：Di Wang Andres E.Llacsahuanga Allcca Ting-Fung Chung Alexander V.Kildishev Yong P.Chen Alexandra Boltasseva Vladimir M.Shalaev Di Wang;Andres E.Llacsahuanga Allcca;Ting-Fung Chung;Alexander V.Kildishev;Yong P.Chen;Alexandra Boltasseva;Vladimir M.Shalaev

作者机构：School of Electrical and Computer EngineeringPurdue UniversityWest LafayetteIN 47907USA Birck Nanotechnology CenterPurdue UniversityWest LafayetteIN 47907USA Department of Physics and AstronomyPurdue UniversityWest LafayetteIN 47907USA Purdue Quantum Science and Engineering Institute(PQSEI)Purdue UniversityWest LafayetteIN 47907USA 

出 版 物：《Light(Science & Applications)》 (光（科学与应用)（英文版）)

年 卷 期：2020年第9卷第1期

页      面：793-802页

核心收录：

学科分类：081702[工学-化学工艺] 07[理学] 08[工学] 0817[工学-化学工程与技术] 070204[理学-等离子体物理] 0702[理学-物理学] 

基　　金：financial support from the Air Force Office of Scientific Research MURI Grants(FA9550-14-1-0389 and AFOSR grant on transdimensional photonics) NSF Materials Research Science and Engineering Center(MRSEC)program(DMR 1120923) NSF Civil,Mechanical,and Manufacturing Innovation(CMMI)program(1538360) NSF Emerging Frontiers&Multidisciplinary Activities(EFMA#1641101) Purdue Discovery Park Big Idea Challenge program the financial support from the DARPA/DSO Extreme Optics and Imaging(EXTREME)program(HR00111720032) 

主　　题：electrical plasmon hinder 

摘      要：The recently proposed concept of graphene photodetectors offers remarkable properties such as unprecedented compactness,ultrabroadband detection,and an ultrafast response ***,owing to the low optical absorption of pristine monolayer graphene,the intrinsically low responsivity of graphene photodetectors significantly hinders the development of practical *** address this issue,numerous efforts have thus far been made to enhance the light–graphene interaction using plasmonic *** approaches,however,can be significantly advanced by leveraging the other critical aspect of graphene photoresponsivity enhancement-electrical junction *** has been reported that the dominant photocarrier generation mechanism in graphene is the photothermoelectric(PTE)***,the two energy conversion mechanisms involved in the graphene photodetection process are light-to-heat and heat-to-electricity *** this work,we propose a meticulously designed device architecture to simultaneously enhance the two conversion ***,a gap plasmon structure is used to absorb a major portion of the incident light to induce localized heating,and a pair of split gates is used to produce a p-n junction in graphene to augment the PTE current *** gap plasmon structure and the split gates are designed to share common key components so that the proposed device architecture concurrently realizes both optical and electrical *** experimentally demonstrate the dominance of the PTE effect in graphene photocurrent generation and observe a 25-fold increase in the generated photocurrent compared to the un-enhanced *** further photocurrent enhancement can be achieved by applying a DC bias,the proposed device concept shows vast potential for practical applications.