Giant-Capacitance-Induced Wide Quantum Hall Plateaus in Graphene on LaAlO3/SrTiO3 Heterostructures

作     者：Ran Tao Lin Li Li-Jun Zhu Yue-Dong Yan Lin-Hai Guo Xiao-Dong Fan Chang-Gan Zeng 陶然;李林;朱丽君;严跃冬;郭林海;范晓东;曾长淦

作者机构：International Center for Quantum Design of Functional Materials(ICQD)Hefei National Laboratory for Physical Sciences at the Microscaleand Synergetic Innovation Center of Quantum Information and Quantum PhysicsUniversity of Science and Technology of ChinaHefei 230026China CAS Key Laboratory of Strongly-Coupled Quantum Matter Physicsand Department of PhysicsUniversity of Science and Technology of ChinaHefei 230026China 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2020年第37卷第7期

页      面：86-91页

核心收录：

学科分类：081704[工学-应用化学] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0817[工学-化学工程与技术] 0703[理学-化学] 070301[理学-无机化学] 0702[理学-物理学] 

基　　金：Supported by the National Natural Science Foundation of China (Grant Nos.11974324,11804326 and U1832151) the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No.XDC07010000) the National Key Research and Development Program of China (Grant No.2017YFA0403600) Anhui Initiative in Quantum Information Technologies (Grant No.AHY170000) Hefei Science Center CAS (Grant No.2018HSC-UE014) 

主　　题：quantum realization dielectric 

摘      要：Hybrid structures of two distinct materials provide an excellent opportunity to optimize *** report the realization of wide quantum Hall plateaus in graphene field-effect devices on the LaAlO3/SrTiO3 ***-defined quantized Hall resistance plateaus at filling factors ν=±2 can be obtained over wide ranges of the magnetic field and gate voltage,e.g.,extending from 2 T to a maximum available magnetic field of 9 *** using a simple band diagram model,it is revealed that these wide plateaus arise from the ultralarge capacitance of the ultra-thin LAO layer acting as the dielectric *** is distinctly different from the case of epitaxial graphene on Si C substrates,where the realization of giant Hall plateaus relies on the charge transfer between the graphene layer and interface states in *** results offer an alternative route towards optimizing the quantum Hall performance of graphene,which may find its applications in the further development of quantum resistance metrology.