Ultrathin Al Oxide Seed Layer for Atomic Layer Deposition of High-κ Al2O3 Dielectrics on Graphene

作     者：Hang Yang Wei Chen Ming-Yang Li Feng Xiong Guang Wang Sen Zhang Chu-Yun Deng Gang Peng Shi-Qiao Qin 杨航;陈卫;李铭洋;熊峰;王广;张森;邓楚芸;彭刚;秦石乔

作者机构：College of Liberal Arts and ScienceNational University of Defense TechnologyChangsha 410073China China Aerodynamics Research and Development CenterHypervelocity Aerodynamics InstituteMianyang 621000China College of Advanced Interdisciplinary StudiesNational University of Defense TechnologyChangsha 410073China College of Aerospace Science and EngineeringNational University of Defense TechnologyChangsha 410073China 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2020年第37卷第7期

页      面：80-85页

核心收录：

学科分类：081704[工学-应用化学] 07[理学] 08[工学] 0817[工学-化学工程与技术] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0704[理学-天文学] 070301[理学-无机化学] 

基　　金：Supported by Strengthening Project of Science and Technology Commission Foundation under Grant No.2019JCJQZD 

主　　题：bonds utilizing convenient 

摘      要：Due to the lack of surface dangling bonds in graphene,the direct growth of high-κ films via atomic layer deposition(ALD) technique often produces the dielectrics with a poor quality,which hinders its integration in modern semiconductor *** pretreatment approaches,such as chemical functionalization with ozone and plasma treatments,would inevitably degrade the quality of the underlying ***,we tackled this problem by utilizing an effective and convenient physical *** detail,the graphene surface was pretreated with the deposition of thermally evaporated ultrathin Al metal layer prior to the Al2O3 growth by *** the device was placed in a drying oven for 30 min to be naturally oxidized as a seed *** the assistance of an Al oxide seed layer,pinhole-free Al2O3 dielectrics growth on graphene was *** detective defects or disorders were introduced into graphene by Raman ***,our fabricated graphene topgated field effect transistor exhibited high mobility(~6200 cm2V-1s-1) and high transconductance(~117 μS).Thin dielectrics demonstrated a relative permittivity of 6.5 over a large area and a leakage current less than1.6 p A/μ*** results indicate that Al oxide functionalization is a promising pathway to achieve scaled gate dielectrics on graphene with high performance.