Wetting Layer Effect on Optical Gain of Strained CdTe/ZnTe Pyramidal Quantum Dots
Wetting Layer Effect on Optical Gain of Strained CdTe/ZnTe Pyramidal Quantum Dots作者机构:Department of Electronics Engineering Catholic University of Daegu Hayang Kyeongbuk 712-702 Korea
出 版 物:《Chinese Physics Letters》 (中国物理快报(英文版))
年 卷 期:2010年第27卷第9期
页 面:233-236页
核心收录:
学科分类:080903[工学-微电子学与固体电子学] 080904[工学-电磁场与微波技术] 0809[工学-电子科学与技术(可授工学、理学学位)] 07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 0702[理学-物理学]
基 金:Research Fund from the Catholic University of Daegu in 2010
主 题:Thickness Layering Energy Sides
摘 要:The optical properties of strained CdTe/ZnTe pyramidal quantum dots (QDs) are investigated as a function of the wetting layer thickness using an eight-band strain-dependent k.p Hamiltonian. The ground-state subband energies in the conduction and valence bands rapidly decreases with the increasing wetting layer thickness. This is attributed to the reduction of subband energies in both the conduction and the valence bands due to the strain effect. The optical gain peak on the shorter wavelength side decreases with the increasing wetting layer thickness. On the other hand, the gain peak on the longer wavelength side is nearly independent of the wetting layer thickness. The decrease in the gain peak on the shorter wavelength side is related to the decrease in matrix elements corresponding to transitions between higher subbands such as (3, 4) and (4, 3).