Ballistic transport in nanoscale self-switching devices

作     者：CHEN ZiMin ZHENG ZhiYuan XU KunYuan WANG Gang 

作者机构：State Key Laboratory of Optoelectronic Materials and TechnologiesSun Yat-sen UniversityGuangzhou 510275China School of Physics and Telecommunication EngineeringSouth China Normal UniversityGuangzhou 510631China 

出 版 物：《Chinese Science Bulletin》 (Chinese Science Bulletin)

年 卷 期：2011年第56卷第21期

页      面：2206-2209页

核心收录：

学科分类：080801[工学-电机与电器] 0808[工学-电气工程] 08[工学] 

基　　金：supported by the FOK YING TONG Education Foundation (122004) the Natural Science Foundation of Guangdong Province,China (9451063101002244,10151063101000025) 

主　　题：弹道输运 开关设备 纳米级 蒙特卡罗方法 通道长度 操作速度 开关器件 纳米器件 

摘      要：Using the Monte Carlo method,a type of semiconductor nano-device called self-switching device (SSD),which has diode-like I-V characteristics,was *** analyzing the microscopic transport behavior of the carriers,we show that the ballistic effects exist in the SSDs when the channel length of the device is extremely short (～120 nm).Furthermore,we show that the ballistic effect doubles the average drift velocity of the carriers (to ～6.0×107 cm/s) in short-channel SSDs,which decreases the transit *** implies that when the dimensions are decreased to nanoscale length,the SSD can operate much faster because the ballistic effect increases the operation speed of the ***,because of the ballistic transport,the energy efficiency may also be improved.