Electronic behavior of native oxide films on Ti and TiN during 90-day immersion in electrolytes with different pH levels

作     者：Amir Poursaee Golnaz Najaf-Tomaraei Marian S.Kennedy Amir Poursaee;Golnaz Najaf-Tomaraei;Marian S.Kennedy

作者机构：Department of Materials Science and Engineering and Glenn Department of Civil EngineeringClemson UniversityClemsonSC 29634USA Department of Materials Science and EngineeringClemson UniversityClemsonSC 29634USA 

出 版 物：《Rare Metals》 (稀有金属（英文版）)

年 卷 期：2021年第40卷第3期

页      面：582-589页

核心收录：

学科分类：081702[工学-化学工艺] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0817[工学-化学工程与技术] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

主　　题：Ti TiN Thin films Mott-Schottky analysis Semiconductivity 

摘      要：This work presents the electronic behavior of Ti and TiN thin films when exposed to electrolytes with pH levels of 2,7 and 13 for 90 *** potentio-electrochemical impedance spectroscopy tests were performed on the 100-nm Ti and TiN monolithic films,and MottSchottky analysis of these tests was used to determine the films’ semiconductive behavior and changes in the donor/acceptor *** addition,the flat-band potential of each film’s surface oxide was also *** attempt was made to control oxide formation,and therefore,these tests reflected the native surfaces of these *** the TiN films exhibited n-type semiconductivity in all electrolytes,the Ti films only showed n-type behavior in the acidic(pH=2) and neutral(pH=7) *** semiconductivity of the Ti films transitioned to p-type during exposure to the basic electrolyte(pH=13) after reaching 60 ***,there was a significant increase in the donor densities for both Ti and TiN films when immersed in the basic electrolyte relative to the acidic and neutral electrolytes.