Characterization of Full-WDM-Band Photodiode Modules Using Raman Amplifiers in the U Band at 40 Gb/s

作     者：Morio Wada Toshimasa Umezawa Takahiro Kudou Takashi Mogi Shinji Iio Shinji Kobayashi Tsuyoshi Yakihara Akira Miura 

作者机构：Corporate R&D Center Yokogawa Electric Co. JapanCorporate R&D Center Yokogawa Electric Co. JapanCorporate R&D Center Yokogawa Electric Co. JapanCorporate R&D Center Yokogawa Electric Co. JapanCorporate R&D Center Yokogawa Electric Co. JapanCorporate R&D Center Yokogawa Electric Co. JapanCorporate R&D Center Yokogawa Electric Co. JapanCorporate R&D Center Yokogawa Electric Co. Japan 

出 版 物：《光学学报》 (Acta Optica Sinica)

年 卷 期：2003年第23卷第S1期

页      面：447-448页

核心收录：

学科分类：08[工学] 0803[工学-光学工程] 

主　　题：WDM for with Characterization of Full-WDM-Band Photodiode Modules Using Raman Amplifiers in the U Band at 40 Gb/s of in 

摘      要：We present the characteristics of a full-WDM-band photodiode module in 40 Gb/s U-band operation using a Raman amplifier. This module is suitable for wide-band transmission systems with the additional new channels in the U band.