Toward 5.2μm terawatt few-cycle pulses via optical parametric chirped-pulse amplification with oxide La3Ga5.5Nb0.5O14crystals
Toward 5.2μm terawatt few-cycle pulses via optical parametric chirped-pulse amplification with oxide La3Ga5.5Nb0.5O14crystals作者机构:Key Laboratory for Laser Plasmas(Ministry of Education)Collaborative Innovation Centre of IFSA(CICIFSA)School of Physics and AstronomyShanghai Jiao Tong UniversityShanghai 200240China Tsung-Dao Lee InstituteShanghai Jiao Tong UniversityShanghai 200240China
出 版 物:《High Power Laser Science and Engineering》 (高功率激光科学与工程(英文版))
年 卷 期:2019年第7卷第4期
页 面:21-32页
核心收录:
学科分类:081704[工学-应用化学] 080901[工学-物理电子学] 07[理学] 0809[工学-电子科学与技术(可授工学、理学学位)] 08[工学] 0817[工学-化学工程与技术] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0703[理学-化学] 070301[理学-无机化学] 0803[工学-光学工程]
基 金:supported in part by the National Natural Science Foundation of China(Nos.61705128 61727820 and 91850203) Science and Technology Commission of Shanghai Municipality(Nos.17YF1409100 and17ZR1414000)
主 题:few-cycle mid-infrared OPCPA oxide LGN crystals
摘 要:High-power femtosecond lasers beyond 5μm are attractive for strong-field physics with mid-infrared(IR)fields but are difficult to scale *** optical parametric chirped-pulse amplification(OPCPA)at mid-IR wavelengths,a nonlinear crystal is vital,and its transmittance,dispersion,nonlinear coefficient and size determine the achievable power and *** beyond 5μm routinely relies on semiconductor crystals because common oxide crystals are not transparent in this spectral ***,the small size and low damage threshold of semiconductor crystals fundamentally limit the peak power to *** this paper,we design a terawatt-class OPCPA system at 5.2μm based on a new kind of oxide crystal of La3Ga5.5Nb0.5O14(LGN).The extended transparent range,high damage threshold,superior phase-matching characteristics and large size of LGN enable the generation of 0.13 TW seven-cycle pulses at5.2μ*** design fully relies on the state-of-the-art OPCPA technology of an octave-spanning ultrafast Ti:sapphire laser and a thin-disk Yb:YAG laser,offering the performance characteristics of high power,a high repetition rate and a stable carrier-envelope phase.