Formations and morphological stabilities of ultrathin CoSi_2 films

作     者：朱志炜 高歆栋 张志滨 朴颖华 胡成 张卫 吴东平 

作者机构：State Key Laboratory of ASIC and SystemSchool of MicroelectronicsFudan University Solid-State Electronicsthe Angstro¨m LaboratoryUppsala University 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2012年第21卷第8期

页      面：453-458页

核心收录：

学科分类：08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：Project supported by the "China National Science and Technology Major Project 02" (Grant No. 2009ZX02035-003) the National Natural Science Foundation of China (Grant No. 61176090) the Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning 

主　　题：silicide epitaxial alignment ultrathin film 

摘      要：In this paper we investigate the formations and morphological stabilities of Co-silicide fihns using 1-8-nm thick Co layers sputter-deposited on silicon （100） substrates. These ultrathin Co-silicide films are formed via solid-state reaction of the deposited Co films with Si substrate at annealing temperatures from 450 ℃ to 850 ℃. For a Co layer with a thickness no larger than i nm, epitaxially aligned CoSi2 films readily grow on silicon （100） substrate and exhibit good morphological stabilities up to 600 ℃. For a Co layer thicker than 1 nm, polycrystalline CoSi and CoSi2 films are observed. The critical thickness below which epitaxially aligned CoSi2 film prevails is smaller than the reported critical thickness of the Ni layer for epitaxial alignment of NiSi2 on silicon （100） substrate. The larger lattice mismatch between the CoSi2 film and the silicon substrate is the root cause for the smaller critical thickness of the Co layer.