Enormous enhancement in electrical performance of few-layered MoTe2 due to Schottky barrier reduction induced by ultraviolet ozone treatment

作     者：Xiaoming Zheng Xueao Zhang Yuehua Wei Jinxin Liu Hang Yang Xiangzhe Zhang Shitan Wang Haipeng Xie Chuyun Deng Yongli Gao Han Huang Xiaoming Zheng;Xueao Zhang;Yuehua Wei;Jinxin Liu;Hang Yang;Xiangzhe Zhang;Shitan Wang;Haipeng Xie;Chuyun Deng;Yongli Gao;Han Huang

作者机构：Hunan Key Laboratory of Super-microstructure and Ultrafast ProcessSchool of Physics and ElectronicsCentral South UniversityChangsha 410083China College of Arts and ScienceNational University of Defense TechnologyChangsha 410073China College of Physical Science and TechnologyXiamen UniversityXiamen 361005China Department of Physics and AstronomyUniversity of RochesterRochesterNY 14627USA 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2020年第13卷第4期

页      面：952-958页

核心收录：

学科分类：0808[工学-电气工程] 080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0805[工学-材料科学与工程（可授工学、理学学位）] 0803[工学-光学工程] 0702[理学-物理学] 

基　　金：We acknowledge the financial support from the National Natural Science Foundation of China(Nos.11874427 11874423).Dr.H an H uang acknowledges support from the Innovation-Driven project of Central South University(No.2017CX018)and from the Natural Science Foundation of H unan province(No.2016JJ1021).Mr.Xiaoming Zheng acknowledges the support from the Fundamental Research Funds for the Central Universities of Central South University(No.2017zzts066) 

主　　题：MoTe2 ultraviolet ozone surface charge transfer Schottky barrier air stable hole doping 

摘      要：Doping can improve the band alignment at the metal-semiconductor interface to modify the corresponding Schottky barrier,which is crucial for the realization of high-performance logic ***,we systematically investigated a convenient and effective method,ultraviolet ozone treatment,for p-type doping of MoTe2 field-effect transistors to enormously enhance the corresponding electrical *** resulted hole concentration and mobility are near 100 times enhanced to be〜1.0×10^13 cm^-2 and 101.4 cm^2/(V·s),respectively,and the conductivity is improved by 5 orders of *** values are comparable to the highest ones ever obtained via annealing doping or non-lithographic fabrication methods at room *** with the pristine one,the photoresponsivity(522 mA/W)is enhanced approximately 100 *** excellent performances can be attributed to the sharply reduced Schottky barrier because of the surface charge transfer from MoTe2 to MoOx(x3),as proved by photoemission ***,the p-doped devices exhibit excellent stability in ambient *** findings show significant potential in future nanoelectronic and optoelectronic applications.