Surface potential-based analytical model for InGaZnO thin-film transistors with independent dual-gates

作     者：何伊妮 邓联文 覃婷 廖聪维 罗衡 黄生祥 Yi-Ni He;Lian-Wen Deng;Ting Qin;Cong-Wei Liao;Heng Luo;Sheng-Xiang Huang

作者机构：School of Physics and ElectronicsCentral South UniversityChangsha 410083China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2020年第29卷第4期

页      面：415-419页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0704[理学-天文学] 

基　　金：Project supported by the National Key Research and Development Program of China(Grant No.2017YFA0204600) the Fundamental Research Funds for the Central Universities of Central South University,China(Grant No.2019zzts424)。 

主　　题：analytical model independent dual-gate indium-gallium zinc oxide(InGaZnO) surface potential 

摘      要：An analytical drain current model on the basis of the surface potential is proposed for indium-gallium zinc oxide(InGaZnO)thin-film transistors(TFTs)with an independent dual-gate(IDG)structure.For a unified expression of carriers’distribution for the sub-threshold region and the conduction region,the concept of equivalent flat-band voltage and the Lambert W function are introduced to solve the Poisson equation,and to derive the potential distribution of the active layer.In addition,the regional integration approach is used to develop a compact analytical current-voltage model.Although only two fitting parameters are required,a good agreement is obtained between the calculated results by the proposed model and the simulation results by TCAD.The proposed current-voltage model is then implemented by using Verilog-A for SPICE simulations of a dual-gate InGaZnO TFT integrated inverter circuit.