Influence of oxygen pressure on critical current density and magnetic flux pinning structures in YBa_2 Cu_3 O_(7-x) fabricated by chemical solution deposition

作     者：丁发柱 古宏伟 张腾 戴少涛 肖立业 

作者机构：Key Laboratory of Applied SuperconductivityInstitute of Electrical EngineeringChinese Academy of Sciences 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2011年第20卷第2期

页      面：478-481页

核心收录：

学科分类：08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：supported by the National Natural Science Foundation of China (Grant No. 51002149) 

主　　题：YBCO oxygen pressure stacking fault TFA-MOD 

摘      要：This paper studies the effect of oxygen partial pressure on the fabrication of YBa2Cu307-x films on （00/） LaAIO3 substrates by metalorganic deposition using trifluoroacetates （TFA-MOD）. As the oxygen partial pressure increases to 1500 Pa, a great increase in the superconducting properties is observed at high magnetic fields parallel to the YBCO c axis. The cross-sectional transmission electron microscope images show that a high density of stacking faults in the size range of 10-15 nm may act as flux pinning centres to enhance the critical current density of the YBCO films