Metrology Challenges in 3D NAND Flash Technical Development and Manufacturing
作者机构：Yangtze Memory Technologies Co.LtdWuhanChina430000
出 版 物：《Journal of Microelectronic Manufacturing》 (微电子制造学报（英文）)
年 卷 期：2020年第3卷第1期
页 面：9-16页
学科分类：08[工学] 0812[工学-计算机科学与技术（可授工学、理学学位）]
基 金：The authors would like to thank all YMTC metrology vendors for helping with tool evaluation data collection and data analysis
主 题：3D NAND Metrology Semiconductor HAR Process Control
摘 要：3D NAND technical development and manufacturing face many challenges to scale down their devices,and metrology stands out as much more difficult at each *** planar NAND,3D NAND has a three-dimensional vertical structure with high-aspect *** top-down images is not enough for process control,instead inner structure control becomes much more important than before,*** hole ***,multi-layers,special materials and YMTC unique X-Tacking technology also bring other metrology challenges:high wafer bow,stress induced overlay,opaque film *** development can adopt some destructive methodology(TEM,etch-back SEM),while manufacturing can only use nondestructive *** drive some new metrology development,including X-Ray,mass measure and Mid-IR *** 3D NAND suppliers move to150 layers devices,the existing metrology tools will be pushed to the ***,the metrology must innovate.
维普期刊数据库